The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well
Identifieur interne : 002325 ( Main/Repository ); précédent : 002324; suivant : 002326The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well
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Abstract
The effect of the intense laser field on the intersubband optical absorption for (1-2) transition in a Ga1-xInxNyAs1-y/GaAs single quantum well for different nitrogen and indium concentrations is investigated. The numerical calculations are performed in the effective-mass approximation. We have found that the increase of the nitrogen and indium concentrations with intense laser field leads to important effects on the optical properties of a quantum well. The obtained results show that the desired energy range corresponding to the subbands may be tuned by changing the laser intensity and the nitrogen and indium concentrations. This tunability gives a possibility for near-infrared electro-absorption modulators and quantum well infrared detectors.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of the intense laser field on the intersubband transitions in Ga<sub>1-x</sub>In<sub>x</sub>NyAs<sub>1-y</sub>/GaAs single quantum well</title><author><name sortKey="Ungan, F" uniqKey="Ungan F">F. Ungan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Cumhuriyet University, Physics Department</s1><s2>58140 Sivas</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>58140 Sivas</wicri:noRegion></affiliation></author><author><name sortKey="Kasapoglu, E" uniqKey="Kasapoglu E">E. Kasapoglu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Cumhuriyet University, Physics Department</s1><s2>58140 Sivas</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>58140 Sivas</wicri:noRegion></affiliation></author><author><name sortKey="Duque, C A" uniqKey="Duque C">C. A. Duque</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Instituto de Fisica, Universidad de Antioquia, AA 1226</s1><s2>Medellin</s2><s3>COL</s3><sZ>3 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Medellin</wicri:noRegion></affiliation></author><author><name sortKey="Sari, H" uniqKey="Sari H">H. Sari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Cumhuriyet University, Physics Department</s1><s2>58140 Sivas</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>58140 Sivas</wicri:noRegion></affiliation></author><author><name sortKey="Sokmen, I" uniqKey="Sokmen I">I. Sokmen</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Dokuz Eylül University, Physics Department</s1><s2>35160 Buca, Izmir</s2><s3>TUR</s3><sZ>5 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>35160 Buca, Izmir</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0032374</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0032374 INIST</idno><idno type="RBID">Pascal:12-0032374</idno><idno type="wicri:Area/Main/Corpus">002453</idno><idno type="wicri:Area/Main/Repository">002325</idno></publicationStmt><seriesStmt><idno type="ISSN">1386-9477</idno><title level="j" type="abbreviated">Physica ( E) low-dimens. syst. nanostrut.</title><title level="j" type="main">Physica. E, low-dimentional systems and nanostructures</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Effective mass</term><term>Gallium arsenides</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium</term><term>Infrared detectors</term><term>Nanostructured materials</term><term>Near infrared radiation</term><term>Optical absorption</term><term>Optical properties</term><term>Quantum wells</term><term>Subband</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Arséniure de gallium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Puits quantique</term><term>Nanomatériau</term><term>Absorption optique</term><term>Spectre absorption</term><term>Indium</term><term>Masse effective</term><term>Propriété optique</term><term>Sous bande</term><term>Rayonnement IR proche</term><term>Détecteur IR</term><term>8107S</term><term>8107B</term><term>7840R</term><term>7867</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of the intense laser field on the intersubband optical absorption for (1-2) transition in a Ga<sub>1-x</sub>In<sub>x</sub>N<sub>y</sub>As<sub>1-y</sub>/GaAs single quantum well for different nitrogen and indium concentrations is investigated. The numerical calculations are performed in the effective-mass approximation. We have found that the increase of the nitrogen and indium concentrations with intense laser field leads to important effects on the optical properties of a quantum well. The obtained results show that the desired energy range corresponding to the subbands may be tuned by changing the laser intensity and the nitrogen and indium concentrations. This tunability gives a possibility for near-infrared electro-absorption modulators and quantum well infrared detectors.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1386-9477</s0></fA01><fA03 i2="1"><s0>Physica ( E) low-dimens. syst. nanostrut.</s0></fA03><fA05><s2>44</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The effect of the intense laser field on the intersubband transitions in Ga<sub>1-x</sub>In<sub>x</sub>NyAs<sub>1-y</sub>/GaAs single quantum well</s1></fA08><fA11 i1="01" i2="1"><s1>UNGAN (F.)</s1></fA11><fA11 i1="02" i2="1"><s1>KASAPOGLU (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>DUQUE (C. 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